FOD3125
Ta'rif
Texnik parametrlar
The FOD3125 Optocoupler Gate Driver is a robust solution designed for demanding industrial applications, offering extended industrial temperature range (-40°C to 125°C), high noise immunity (35 kV/s minimum Common Mode Rejection), and a peak output current capability of 2.5 A for driving 1200 V/20 A IGBTs. Its use of P-channel MOSFETs allows for an output voltage swing close to the supply rail, enhancing efficiency. With a wide supply voltage range (15 V to 30 V), fast switching speed, and safety features such as Under Voltage LockOut and regulatory approvals (UL1577, pending DIN EN/IEC60747-5-5), it ensures reliable and precise control. Additionally, the device provides >8.0 mm bo'shliq va o'tish masofasi, maksimal ishlaydigan izolyatsiyalash kuchlanishi 1,414 V va Pb-Free qurilmasi sifatida ekologik jihatdan qulay. Umuman olganda, FOD3125 muhim sanoat ilovalari uchun ko'p qirrali va ishonchli tanlovdir.
Tegishli mahsulotlar:
|
Mfr qismi |
FOD3125 |
|
Tavsif |
OPTOISO IGBT MOSFET haydovchisi |
|
Aksiya |
50000 |
|
Mahsulot holati |
Faol |
|
Texnologiya |
Optik ulanish |
|
Kanallar soni |
1 |
|
Voltaj - izolyatsiya |
5000 Vrms |
|
Umumiy rejim vaqtinchalik immunitet (min) |
35kV/ms |
|
Tarqatish kechikishi tpLH / tpHL (Maks) |
400ns, 400ns |
|
Puls kengligining buzilishi (maksimal) |
100ns |
|
Hozirgi - Chiqish yuqori, past |
2A,2A |
|
Joriy - eng yuqori chiqish |
2A |
|
Voltaj - oldinga (Vf) (Tip) |
1.4V |
|
Joriy - DC oldinga (agar) (Maks) |
25mA |
|
Voltaj - Chiqish manbai |
15V ~ 30V |
|
Ishlash harorati |
-40-C ~ 100-C |
|
Paket / quti |
DIP8 (7,62 mm) |
|
Paket |
Quvur |
Ilovalar:
• Sanoat inverteri
• Uzluksiz quvvat manbai
• Induksion isitish
• Izolyatsiya qilingan IGBT/Power MOSFET Gate Drive
Tavsif:
FOD3125 - 2,5 A quvvatli chiqish oqimi eshigi haydovchi optokupleri bo'lib, u ko'pgina o'rta IGBT yoki MOSFETlarni kengaytirilgan sanoat harorat oralig'ida -40 darajadan 125 darajagacha haydashga qodir. Dvigatelni boshqarish inverteri ilovalarida ishlatiladigan IGBT va MOSFET quvvatlarini tez almashtirish va yuqori samarali quvvat tizimi uchun juda mos keladi. U yuqori shovqin immunitetiga erishish uchun ON Semiconductor patentlangan koplanar qadoqlash texnologiyasidan, Optoplanar® va optimallashtirilgan IC dizaynidan foydalanadi, bu yuqori umumiy rejimni rad etish bilan tavsiflanadi. U galyum alyuminiy arsenid (AlGaAs) yorug'lik chiqaradigan dioddan iborat bo'lib, MOSFET-ni surish-pull chiqish bosqichi uchun yuqori tezlikda drayveri bo'lgan integral mikrosxemaga optik ravishda ulangan.
Issiq teglar: fod3125, Xitoy fod3125 ishlab chiqaruvchilari, etkazib beruvchilari
So'rov yuborish
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