NCV57090BDWR2G

The NCV57090BDWR2G is an advanced isolation gate driver known for its high peak output current, low clamp voltage drop, and various protective features. With a peak output current of ±6.5 A, it offers precise control of IGBTs and MOSFETs. Its low clamp voltage drop eliminates the need for a negative power supply, simplifying system design. Short propagation delays and active gate clamping during short circuits enhance system performance and reliability. The active gate pull-down feature ensures rapid device turn-off, increasing system safety. Tight UVLO thresholds and a wide bias voltage range provide flexibility in bias voltage selection. The device supports logic inputs at 3.3 V, 5 V, and 15 V, and it offers 5 kVrms galvanic isolation, high transient immunity, and electromagnetic immunity. It is also AEC-Q100 qualified, PPAP capable, Pb-Free, Halogen Free/BFR Free, and RoHS compliant, making it suitable for automotive and environmentally conscious applications.

NCx57090y, NCx57091y are high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options such as Active Miller Clamp (version A/D/F), negative power supply (version B) and separate high and low (OUTH and OUTL) driver outputs (version C/E) for system design convenience. The driver accommodate wide range of input bias voltage and signal levels from 3.3 V to 20 V and they are available in wide−body SOIC−8 package.

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